SMDJ-65608EV-45SB datasheet, PDF

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SMDJ-65608EV-45SB: Description128K X 8 STANDARD SRAM, 45 ns, DFP32; Categorystorage; File Size328KB，15 Pages; ManufacturerAtmel (Microchip)

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SMDJ-65608EV-45SB Overview

128K X 8 STANDARD SRAM, 45 ns, DFP32

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Features

•

Operating Voltage: 5V

•

Access Time: 30, 45 ns

•

Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 µW (Typ)

– Data Retention: 0.5 µW (Typ)

Wide Temperature Range: -55°C to +125°C

400 Mils Width Packages: FP32 and SB32

TTL Compatible Inputs and Outputs

Asynchronous

Single 5V Supply

Equal Cycle and Access Time

Gated Inputs:

– No Pull-up/down

– Resistors Are Required

QML Q and V with SMD 5962-89598

ESCC B with Specification 9301/047

•

Rad. Tolerant

128K x 8

Very Low Power

5V CMOS SRAM

M65608E

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. 4151I–AERO–03/04

SMDJ-65608EV-45SB Related Products

	SMDJ-65608EV-45SB	MMC9-65608EV-30	MMDJ-65608EV-30	MMDJ-65608EV-45	5962-8959847Q6A	SMDJ-65608EV-30SB	SMC9-65608EV-45SB	SMC9-65608EV-30SB	MMC9-65608EV-45	MM0-65608EV-30-E
Description	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DIP32	128K X 8 STANDARD SRAM, 30 ns, DIP32	128K X 8 STANDARD SRAM, 45 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-
Parts packaging code	-	DIP	DFP	DFP	DIE	DFP	DIP	DIP	DIP	-
package instruction	-	DIP, DIP32,.4	DFP, FL32,.4	DFP, FL32,.4	DIE, PGA66,11X11	DFP, FL32,.4	DIP, DIP32,.4	DIP, DIP32,.4	DIP, DIP32,.4	-
Contacts	-	32	32	32	-	32	32	32	32	-
Reach Compliance Code	-	compliant	compli	compliant	compli	compli	compli	compli	compli	-
ECCN code	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-
Maximum access time	-	30 ns	30 ns	45 ns	30 ns	30 ns	45 ns	30 ns	45 ns	-
I/O type	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-
JESD-30 code	-	R-CDIP-T32	R-XDFP-F32	R-XDFP-F32	X-XUUC-N	R-XDFP-F32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32	-
JESD-609 code	-	e0	e0	e0	e0	e0	e0	e0	e0	-
length	-	40.64 mm	20.825 mm	20.825 mm	-	20.825 mm	40.64 mm	40.64 mm	40.64 mm	-
memory density	-	1048576 bit	1048576 bi	1048576 bit	1048576 bi	1048576 bi	1048576 bi	1048576 bi	1048576 bi	-
Memory IC Type	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-
memory width	-	8	8	8	8	8	8	8	8	-
Number of functions	-	1	1	1	1	1	1	1	1	-
Number of terminals	-	32	32	32	66	32	32	32	32	-
word count	-	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	-
character code	-	128000	128000	128000	128000	128000	128000	128000	128000	-
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	-	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	-
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-
organize	-	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	-
Output characteristics	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	-	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-
encapsulated code	-	DIP	DFP	DFP	DIE	DFP	DIP	DIP	DIP	-
Encapsulate equivalent code	-	DIP32,.4	FL32,.4	FL32,.4	PGA66,11X11	FL32,.4	DIP32,.4	DIP32,.4	DIP32,.4	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	-	IN-LINE	FLATPACK	FLATPACK	UNCASED CHIP	FLATPACK	IN-LINE	IN-LINE	IN-LINE	-
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-
power supply	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
Filter level	-	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-PRF-38535 Class Q	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883	-
Maximum seat height	-	4.32 mm	2.72 mm	2.72 mm	-	2.72 mm	4.32 mm	4.32 mm	4.32 mm	-
Maximum standby current	-	0.00015 A	0.00015 A	0.00015 A	-	0.00015 A	0.00015 A	0.00015 A	0.00015 A	-
Minimum standby current	-	2 V	2 V	2 V	4.5 V	2 V	2 V	2 V	2 V	-
Maximum slew rate	-	0.13 mA	0.13 mA	0.1 mA	-	0.13 mA	0.1 mA	0.13 mA	0.1 mA	-
Maximum supply voltage (Vsup)	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-
Minimum supply voltage (Vsup)	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-
Nominal supply voltage (Vsup)	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	-
surface mount	-	NO	YES	YES	YES	YES	NO	NO	NO	-
technology	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-
Temperature level	-	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	-
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb) - hot dipped	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	-	THROUGH-HOLE	FLAT	FLAT	NO LEAD	FLAT	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-
Terminal pitch	-	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	-
Terminal location	-	DUAL	DUAL	DUAL	UPPER	DUAL	DUAL	DUAL	DUAL	-
total dose	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-
width	-	10.16 mm	10.415 mm	10.415 mm	-	10.415 mm	10.16 mm	10.16 mm	10.16 mm	-

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