MM0-65608EV-30-E datasheet, PDF

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MM0-65608EV-30-E: Description128K X 8 STANDARD SRAM, 30 ns, CDIP32; Categorystorage; File Size328KB，15 Pages; ManufacturerAtmel (Microchip)

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MM0-65608EV-30-E Overview

128K X 8 STANDARD SRAM, 30 ns, CDIP32

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Features

•

Operating Voltage: 5V

•

Access Time: 30, 45 ns

•

Very Low Power Consumption

– Active: 250 mW (Typ)

– Standby: 1 µW (Typ)

– Data Retention: 0.5 µW (Typ)

Wide Temperature Range: -55°C to +125°C

400 Mils Width Packages: FP32 and SB32

TTL Compatible Inputs and Outputs

Asynchronous

Single 5V Supply

Equal Cycle and Access Time

Gated Inputs:

– No Pull-up/down

– Resistors Are Required

QML Q and V with SMD 5962-89598

ESCC B with Specification 9301/047

•

Rad. Tolerant

128K x 8

Very Low Power

5V CMOS SRAM

M65608E

Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an

extremely low standby supply current (Typical value = 0.2 µA) with a fast access time

at 30 ns over the full military temperature range. The high stability of the 6T cell pro-

vides excellent protection against soft errors due to noise.

The M65608E is processed according to the methods of the latest revision of the MIL

STD 883 (class B or S), ESA SCC 9000 or QML.

Rev. 4151I–AERO–03/04

MM0-65608EV-30-E Related Products

	MM0-65608EV-30-E	MMC9-65608EV-30	MMDJ-65608EV-30	MMDJ-65608EV-45	5962-8959847Q6A	SMDJ-65608EV-45SB	SMDJ-65608EV-30SB	SMC9-65608EV-45SB	SMC9-65608EV-30SB	MMC9-65608EV-45
Description	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, CDIP32	128K X 8 STANDARD SRAM, 45 ns, DFP32	128K X 8 STANDARD SRAM, 30 ns, DFP32	128K X 8 STANDARD SRAM, 45 ns, DIP32	128K X 8 STANDARD SRAM, 30 ns, DIP32	128K X 8 STANDARD SRAM, 45 ns, CDIP32
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible
Maker	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	-	-	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	-	DIP	DFP	DFP	DIE	-	DFP	DIP	DIP	DIP
package instruction	-	DIP, DIP32,.4	DFP, FL32,.4	DFP, FL32,.4	DIE, PGA66,11X11	-	DFP, FL32,.4	DIP, DIP32,.4	DIP, DIP32,.4	DIP, DIP32,.4
Contacts	-	32	32	32	-	-	32	32	32	32
Reach Compliance Code	-	compliant	compli	compliant	compli	-	compli	compli	compli	compli
ECCN code	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	-	30 ns	30 ns	45 ns	30 ns	-	30 ns	45 ns	30 ns	45 ns
I/O type	-	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON	COMMON
JESD-30 code	-	R-CDIP-T32	R-XDFP-F32	R-XDFP-F32	X-XUUC-N	-	R-XDFP-F32	R-CDIP-T32	R-CDIP-T32	R-CDIP-T32
JESD-609 code	-	e0	e0	e0	e0	-	e0	e0	e0	e0
length	-	40.64 mm	20.825 mm	20.825 mm	-	-	20.825 mm	40.64 mm	40.64 mm	40.64 mm
memory density	-	1048576 bit	1048576 bi	1048576 bit	1048576 bi	-	1048576 bi	1048576 bi	1048576 bi	1048576 bi
Memory IC Type	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	-	8	8	8	8	-	8	8	8	8
Number of functions	-	1	1	1	1	-	1	1	1	1
Number of terminals	-	32	32	32	66	-	32	32	32	32
word count	-	131072 words	131072 words	131072 words	131072 words	-	131072 words	131072 words	131072 words	131072 words
character code	-	128000	128000	128000	128000	-	128000	128000	128000	128000
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	125 °C	125 °C	125 °C	125 °C	-	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C	-55 °C
organize	-	128KX8	128KX8	128KX8	128KX8	-	128KX8	128KX8	128KX8	128KX8
Output characteristics	-	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	-	DIP	DFP	DFP	DIE	-	DFP	DIP	DIP	DIP
Encapsulate equivalent code	-	DIP32,.4	FL32,.4	FL32,.4	PGA66,11X11	-	FL32,.4	DIP32,.4	DIP32,.4	DIP32,.4
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	FLATPACK	FLATPACK	UNCASED CHIP	-	FLATPACK	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	-	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V	5 V
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	-	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-PRF-38535 Class Q	-	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883 Class B	MIL-STD-883
Maximum seat height	-	4.32 mm	2.72 mm	2.72 mm	-	-	2.72 mm	4.32 mm	4.32 mm	4.32 mm
Maximum standby current	-	0.00015 A	0.00015 A	0.00015 A	-	-	0.00015 A	0.00015 A	0.00015 A	0.00015 A
Minimum standby current	-	2 V	2 V	2 V	4.5 V	-	2 V	2 V	2 V	2 V
Maximum slew rate	-	0.13 mA	0.13 mA	0.1 mA	-	-	0.13 mA	0.1 mA	0.13 mA	0.1 mA
Maximum supply voltage (Vsup)	-	5.5 V	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	-	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	-	5 V	5 V	5 V	5 V	-	5 V	5 V	5 V	5 V
surface mount	-	NO	YES	YES	YES	-	YES	NO	NO	NO
technology	-	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS
Temperature level	-	MILITARY	MILITARY	MILITARY	MILITARY	-	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb) - hot dipped	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	-	THROUGH-HOLE	FLAT	FLAT	NO LEAD	-	FLAT	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	-	2.54 mm	1.27 mm	1.27 mm	2.54 mm	-	1.27 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	-	DUAL	DUAL	DUAL	UPPER	-	DUAL	DUAL	DUAL	DUAL
total dose	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	-	-	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V	30k Rad(Si) V
width	-	10.16 mm	10.415 mm	10.415 mm	-	-	10.415 mm	10.16 mm	10.16 mm	10.16 mm

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