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SB580-B

Description
5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201
Categorysemiconductor    Discrete semiconductor   
File Size48KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

SB580-B Overview

5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201

SB580-B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage100 V
Maximum average forward current5 A
Maximum non-repetitive peak forward current250 A
SB570 - SB5100
5.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability
Surge Overload Rating to 150A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 2)
A
B
A
C
D
Mechanical Data
·
·
·
·
·
·
·
·
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Last Page
Marking: Type Number
Weight: 1.1 grams (approximate)
Dim
A
B
C
D
DO-201AD
Min
25.40
7.20
1.20
4.80
Max
¾
9.50
1.30
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
L
= 80°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@ I
F
= 5.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJA
T
j,
T
STG
SB570
70
49
SB580
80
56
5.0
150
0.80
0.5
50
400
10
SB590
90
63
SB5100
100
70
Unit
V
V
A
A
V
mA
pF
K/W
°C
@ T
A
= 25°C
@ T
A
= 100°C
(Note 1)
-65 to +150
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30135 Rev. 5 - 2
1 of 3
www.diodes.com
SB570 - SB5100
ã
Diodes Incorporated

SB580-B Related Products

SB580-B SB5100 SB570 SB570-B SB570_1 SB590-B SB570-T SB5100-B
Description 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 5 A, 70 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 5 A, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 5 A, SILICON, RECTIFIER DIODE
Number of terminals 2 2 - 2 2 - 2 -
Number of components 1 1 - 1 1 - 1 -
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 - ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 - ROHS COMPLIANT, PLASTIC PACKAGE-2 -
state ACTIVE ACTIVE - ACTIVE ACTIVE - ACTIVE -
packaging shape round round - round round - round -
Package Size LONG FORM LONG FORM - LONG FORM LONG FORM - LONG FORM -
Terminal form Wire Wire - Wire Wire - Wire -
Terminal location AXIAL AXIAL - AXIAL AXIAL - AXIAL -
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy -
Craftsmanship SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY - SCHOTTKY -
structure single single - single single - single -
Shell connection isolation isolation - isolation isolation - isolation -
Diode component materials silicon silicon - silicon silicon - silicon -
Diode type rectifier diode rectifier diode - rectifier diode rectifier diode - rectifier diode -
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE -
Phase 1 1 - 1 1 - 1 -
Maximum repetitive peak reverse voltage 100 V 100 V - 100 V 100 V - 100 V -
Maximum average forward current 5 A 5 A - 5 A 5 A - 5 A -
Maximum non-repetitive peak forward current 250 A 250 A - 250 A 250 A - 250 A -

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