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MT46H16M32LFBQ-5 AAT:C TR

Description
Dynamic Random Access Memory MOBILE DDR 512M 16MX32 FBGA
Categorysemiconductor    Memory IC    Dynamic random access memory   
File Size5MB,99 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance
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MT46H16M32LFBQ-5 AAT:C TR Overview

Dynamic Random Access Memory MOBILE DDR 512M 16MX32 FBGA

MT46H16M32LFBQ-5 AAT:C TR Parametric

Parameter NameAttribute value
MakerMicron
Product Categorydynamic random access memory
typeSDRAM Mobile - LPDDR1
Data bus width32 bit
organize16 M x 32
Package/boxVFBGA-90
storage512 Mbit
maximum clock frequency200 MHz
interview time5 ns
Supply voltage - max.1.95 V
Supply voltage - min.1.7 V
Supply current—max.70 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 105 C
seriesMT46H
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
Installation styleSMD/SMT
Factory packaging quantity1000
512Mb: x16, x32 Automotive LPDDR SDRAM
Features
Automotive LPDDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF – 4 Meg x 32 x 4 banks
MT46H16M32LG – 4 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-6
Clock Rate
200 MHz
166 MHz
Access Time
5.0ns
5.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard addressing
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
– 90-ball VFBGA (8mm x 13mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 6ns @ CL = 3 (166 MHz)
• Power
– Standard I
DD2
/I
DD6
– Low-power I
DD2
/I
DD6
• Product certification
– Automotive
• Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Design revision
Notes:
Marking
H
32M16
16M32
LF
BF
B5
BQ
-5
-6
None
L
A
IT
AT
:C
1. Only available for x16 configuration.
2. Only available for x32 configuration.
09005aef846e285e
t67m_embedded_lpddr_512mb.pdf - Rev. E 05/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

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Description Dynamic Random Access Memory MOBILE DDR 512M 16MX32 FBGA Dynamic Random Access Memory MOBILE DDR 512M 16MX32 FBGA Dynamic Random Access Memory MOBILE DDR 512M 32MX16 FBGA Dynamic Random Access Memory MOBILE DDR 512M 32MX16 FBGA Dynamic Random Access Memory MOBILE DDR 512M 16MX32 FBGA Dynamic Random Access Memory MOBILE DDR 512M 16MX32 FBGA Dynamic Random Access Memory MOBILE DDR 512M 32MX16 FBGA Dynamic Random Access Memory MOBILE DDR 512M 32MX16 FBGA
Maker Micron Micron Micron Micron Micron Micron Micron Micron
Product Category dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory dynamic random access memory
type SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1 SDRAM Mobile - LPDDR1
Data bus width 32 bit 32 bit 16 bit 16 bit 32 bit 32 bit 16 bit 16 bit
organize 16 M x 32 16 M x 32 32 M x 16 32 M x 16 16 M x 32 16 M x 32 32 M x 16 32 M x 16
Package/box VFBGA-90 VFBGA-90 VFBGA-60 VFBGA-60 VFBGA-90 VFBGA-90 VFBGA-60 VFBGA-60
storage 512 Mbit 512 Mbit 512 Mbit 512 Mbit 512 Mbit 512 Mbit 512 Mbit 512 Mbit
maximum clock frequency 200 MHz 166 MHz 166 MHz 200 MHz 166 MHz 200 MHz 166 MHz 200 MHz
interview time 5 ns 5 ns 5 ns 5 ns 5 ns 5 ns 5 ns 5 ns
Supply voltage - max. 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V
Supply voltage - min. 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Supply current—max. 70 mA 60 mA 60 mA 70 mA 60 mA 70 mA 60 mA 70 mA
Minimum operating temperature - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C
Maximum operating temperature + 105 C + 85 C + 105 C + 85 C + 85 C + 105 C + 105 C + 85 C
series MT46H MT46H MT46H MT46H MT46H MT46H MT46H MT46H
Installation style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Factory packaging quantity 1000 1000 1000 1000 1440 1440 1782 1782
Encapsulation Reel Reel Reel Reel Tray Tray Tray Tray
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