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BD745B

Description
20 A, 80 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size89KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD745B Overview

20 A, 80 V, NPN, Si, POWER TRANSISTOR

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-3PN package
·Complement
to type BD746/A/B/C
·High
current capability
·High
power dissipation
APPLICATIONS
·For
use in power linear and
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BD745/A/B/C
·
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
BD745
BD745A
V
CBO
Collector-base voltage
BD745B
BD745C
BD745
BD745A
V
CEO
Collector-emitter voltage
BD745B
BD745C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
Collector power dissipation
T
a
=25℃
Junction temperature
Storage temperature
3.5
150
-65~150
Open collector
Open base
80
100
5
20
25
7
115
W
V
A
A
A
Open emitter
90
110
45
60
V
CONDITIONS
VALUE
50
70
V
UNIT

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