EEWORLDEEWORLDEEWORLD

Part Number

Search

HB52F168GB-B

Description
128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM
File Size126KB,19 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Compare View All

HB52F168GB-B Overview

128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM

HB52F168GB-B
HB52D168GB-B
EO
Description
Features
128 MB Unbuffered SDRAM Micro DIMM
16-Mword
×
64-bit, 133/100 MHz Memory Bus, 1-Bank Module
(4 pcs of 16 M
×
16 components)
PC133/100 SDRAM
The HB52F168GB and HB52D168GB are a 16M
×
64
×
1 banks Synchronous Dynamic RAM Micro Dual
In-line Memory Module (Micro DIMM), mounted 4 pieces of 256-Mbit SDRAM (HM5225165BTT) sealed
in TSOP package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of
the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high
density mounting possible without surface mount technology. They provide common data inputs and outputs.
Decoupling capacitors are mounted beside TSOP on the module board.
144-pin Zig Zag Dual tabs socket type (dual lead out)
Outline: 38.00 mm (Length)
×
30.00 mm (Height)
×
3.80 mm (Thickness)
Lead pitch: 0.50 mm
3.3 V power supply
Clock frequency: 133/100 MHz (max)
LVTTL interface
Data bus width:
×
64 Non parity
Single pulsed
RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential
Interleave
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
L
Pr
E0008H10 (1st edition)
(Previous ADE-203-1219A (Z))
Jan. 19, 2001
od
uc
t

HB52F168GB-B Related Products

HB52F168GB-B HB52F168GB-75B HB52F168GB-75BL HB52D168GB-B6BL HB52D168GB-B
Description 128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM 128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM 128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM 128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM 128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM
Is it Rohs certified? - incompatible incompatible incompatible -
Maker - ELPIDA ELPIDA ELPIDA -
Parts packaging code - DIMM DIMM DIMM -
package instruction - DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 -
Contacts - 144 144 144 -
Reach Compliance Code - unknow unknow unknown -
ECCN code - EAR99 EAR99 EAR99 -
access mode - SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST -
Maximum access time - 5.4 ns 5.4 ns 6 ns -
Other features - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH -
Maximum clock frequency (fCLK) - 133 MHz 133 MHz 100 MHz -
I/O type - COMMON COMMON COMMON -
JESD-30 code - R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 -
memory density - 1073741824 bi 1073741824 bi 1073741824 bit -
Memory IC Type - SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE -
memory width - 64 64 64 -
Humidity sensitivity level - 1 1 1 -
Number of functions - 1 1 1 -
Number of ports - 1 1 1 -
Number of terminals - 144 144 144 -
word count - 16777216 words 16777216 words 16777216 words -
character code - 16000000 16000000 16000000 -
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature - 65 °C 65 °C 65 °C -
organize - 16MX64 16MX64 16MX64 -
Output characteristics - 3-STATE 3-STATE 3-STATE -
Package body material - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
encapsulated code - DIMM DIMM DIMM -
Encapsulate equivalent code - DIMM144,32 DIMM144,32 DIMM144,32 -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY -
Peak Reflow Temperature (Celsius) - 225 225 225 -
power supply - 3.3 V 3.3 V 3.3 V -
Certification status - Not Qualified Not Qualified Not Qualified -
refresh cycle - 8192 8192 8192 -
self refresh - YES YES YES -
Maximum standby current - 0.008 A 0.008 A 0.008 A -
Maximum slew rate - 0.88 mA 0.88 mA 0.88 mA -
Maximum supply voltage (Vsup) - 3.6 V 3.6 V 3.6 V -
Minimum supply voltage (Vsup) - 3 V 3 V 3 V -
Nominal supply voltage (Vsup) - 3.3 V 3.3 V 3.3 V -
surface mount - NO NO NO -
technology - CMOS CMOS CMOS -
Temperature level - COMMERCIAL COMMERCIAL COMMERCIAL -
Terminal form - NO LEAD NO LEAD NO LEAD -
Terminal pitch - 0.8 mm 0.8 mm 0.8 mm -
Terminal location - DUAL DUAL DUAL -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 635  2271  823  2314  2900  13  46  17  47  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号