HB52F168GB-75BL datasheet, PDF

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HB52F168GB-75BL: Description128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM; Categorystorage storage; File Size126KB，19 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HB52F168GB-75BL Overview

128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM

HB52F168GB-75BL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	0.88 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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HB52F168GB-B

HB52D168GB-B

Description

Features

128 MB Unbuffered SDRAM Micro DIMM

16-Mword

64-bit, 133/100 MHz Memory Bus, 1-Bank Module

(4 pcs of 16 M

16 components)

PC133/100 SDRAM

The HB52F168GB and HB52D168GB are a 16M

1 banks Synchronous Dynamic RAM Micro Dual

In-line Memory Module (Micro DIMM), mounted 4 pieces of 256-Mbit SDRAM (HM5225165BTT) sealed

in TSOP package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of

the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high

density mounting possible without surface mount technology. They provide common data inputs and outputs.

Decoupling capacitors are mounted beside TSOP on the module board.

•

144-pin Zig Zag Dual tabs socket type (dual lead out)



Outline: 38.00 mm (Length)

30.00 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.50 mm

•

3.3 V power supply

•

Clock frequency: 133/100 MHz (max)

•

LVTTL interface

•

Data bus width:

64 Non parity

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length: 1/2/4/8

•

2 variations of burst sequence



Sequential



Interleave

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

E0008H10 (1st edition)

(Previous ADE-203-1219A (Z))

Jan. 19, 2001

HB52F168GB-75BL Related Products

	HB52F168GB-75BL	HB52F168GB-B	HB52F168GB-75B	HB52D168GB-B6BL	HB52D168GB-B
Description	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 】 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 】 16 components) PC133/100 SDRAM
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-
Maker	ELPIDA	-	ELPIDA	ELPIDA	-
Parts packaging code	DIMM	-	DIMM	DIMM	-
package instruction	DIMM, DIMM144,32	-	DIMM, DIMM144,32	DIMM, DIMM144,32	-
Contacts	144	-	144	144	-
Reach Compliance Code	unknow	-	unknow	unknown	-
ECCN code	EAR99	-	EAR99	EAR99	-
access mode	SINGLE BANK PAGE BURST	-	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-
Maximum access time	5.4 ns	-	5.4 ns	6 ns	-
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	133 MHz	-	133 MHz	100 MHz	-
I/O type	COMMON	-	COMMON	COMMON	-
JESD-30 code	R-XDMA-N144	-	R-XDMA-N144	R-XDMA-N144	-
memory density	1073741824 bi	-	1073741824 bi	1073741824 bit	-
Memory IC Type	SYNCHRONOUS DRAM MODULE	-	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-
memory width	64	-	64	64	-
Humidity sensitivity level	1	-	1	1	-
Number of functions	1	-	1	1	-
Number of ports	1	-	1	1	-
Number of terminals	144	-	144	144	-
word count	16777216 words	-	16777216 words	16777216 words	-
character code	16000000	-	16000000	16000000	-
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	65 °C	-	65 °C	65 °C	-
organize	16MX64	-	16MX64	16MX64	-
Output characteristics	3-STATE	-	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	DIMM	-	DIMM	DIMM	-
Encapsulate equivalent code	DIMM144,32	-	DIMM144,32	DIMM144,32	-
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
Peak Reflow Temperature (Celsius)	225	-	225	225	-
power supply	3.3 V	-	3.3 V	3.3 V	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-
refresh cycle	8192	-	8192	8192	-
self refresh	YES	-	YES	YES	-
Maximum standby current	0.008 A	-	0.008 A	0.008 A	-
Maximum slew rate	0.88 mA	-	0.88 mA	0.88 mA	-
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	-
surface mount	NO	-	NO	NO	-
technology	CMOS	-	CMOS	CMOS	-
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	-
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	-
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	-
Terminal location	DUAL	-	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-

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