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KBL10

Description
4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size79KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

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KBL10 Overview

4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

KBL10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGulf Semiconductor
package instructionR-PSIP-W4
Contacts4
Reach Compliance Codeunknow
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
KBL005 THRU KBL10
SINGLE PHASE SILICON
BRIDGE RECTIFIER
VOLTAGE:50 TO 1000V
CURRENT:4.0A
FEATURE
Ideal for printed circuit board
Surge overload rating:200 A peak
High case dielectric strength
KBL
MECHANICAL DATA
Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
Case: UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: Polarity symbol marked on body
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half -wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current at Ta =40°C
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
forward current 4.0A DC
Maximum DC Reverse Current
Ta =25°C
at rated DC blocking voltage
Ta =100°C
Operating Temperature Range
Storage and Operation Junction Temperature
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Tj
Tstg
KBL
005
50
35
50
KBL
01
100
70
100
KBL
02
200
140
200
KBL
04
400
280
400
4.0
200.0
1.1
KBL
06
600
420
600
KBL
08
800
560
800
KBL
10
1000
700
1000
units
V
V
V
A
A
V
µA
mA
°C
°C
10.0
1.0
-55 to +125
-55 to +150
Rev.A4
www.gulfsemi.com
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