934055683127 datasheet, PDF - EEWORLD Datasheet

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934055683127: DescriptionTRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size270KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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934055683127 Overview

TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

934055683127 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	70 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

Rev. 03 — 11 March 2002

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHP14NQ20T in SOT78 (TO-220AB)

PHB14NQ20T in SOT404 (D

-PAK)

PHD14NQ20T in SOT428 (D-PAK).

1.2 Features

Low on-state resistance

Fast switching

1.3 Applications

DC to DC converters

General purpose switching

1.4 Quick reference data

= 200 V

DSon

≤

230 mΩ

= 14 A

= 125 W

2. Pinning information

Table 1:

Pinning - SOT78, SOT404, SOT428, simpliﬁed outline and symbol

Description

gate (g)

drain (d)

source (s)

mounting base,

connected to

drain (d)

MBK106

Simpliﬁed outline

[1]

Symbol

MBB076

MBK116

MBK091

Top view

1 2 3

SOT78 (TO-220AB)

[1]

SOT404 (D

-PAK)

SOT428 (D-PAK)

It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.

934055683127 Related Products

	934055683127	PHD14NQ20T,118	PHP14NQ20T,127	PHD14NQ20T	934057072118	934055772118	PHB14NQ20T	PHB14NQ20T/T3	PHP14NQ20T
Description	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power	MOSFET N-CH 200V 14A DPAK	MOSFET N-CH 200V 14A TO220AB	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	-	-	-	conform to
Maker	NXP	-	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	TO-220AB	-	TO-220AB	TO-252	TO-252AA	-	-	-	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	-	PLASTIC, SC-46, 3 PIN	PLASTIC, SC-63, DPAK-3	PLASTIC, SMD, SC-63, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3
Contacts	3	-	3	3	3	3	3	3	3
Reach Compliance Code	unknown	-	unknown	not_compliant	unknown	unknown	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	70 mJ	-	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ
Shell connection	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	-	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	14 A	-	14 A	14 A	14 A	14 A	14 A	14 A	14 A
Maximum drain-source on-resistance	0.23 Ω	-	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	-	TO-220AB	TO-252	TO-252AA	-	-	-	TO-220AB
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3
Number of components	1	-	1	1	1	1	1	1	1
Number of terminals	3	-	3	2	2	2	2	2	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	56 A	-	56 A	56 A	56 A	56 A	56 A	56 A	56 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	YES	YES	YES	YES	YES	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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