TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 70 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 14 A |
| Maximum drain-source on-resistance | 0.23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 56 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |

| PHB14NQ20T/T3 | PHD14NQ20T,118 | PHP14NQ20T,127 | 934055683127 | PHD14NQ20T | 934057072118 | 934055772118 | PHB14NQ20T | PHP14NQ20T | |
|---|---|---|---|---|---|---|---|---|---|
| Description | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | MOSFET N-CH 200V 14A DPAK | MOSFET N-CH 200V 14A TO220AB | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power |
| Maker | NXP | - | NXP | NXP | NXP | NXP | NXP | NXP | NXP |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | - | PLASTIC, SC-46, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | PLASTIC, SC-63, DPAK-3 | PLASTIC, SMD, SC-63, DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 | - | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | - | unknown | unknown | not_compliant | unknown | unknown | unknow | unknow |
| ECCN code | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 70 mJ | - | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ |
| Shell connection | DRAIN | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | - | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Maximum drain current (ID) | 14 A | - | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A | 14 A |
| Maximum drain-source on-resistance | 0.23 Ω | - | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω | 0.23 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | - | 3 | 3 | 2 | 2 | 2 | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | - | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 56 A | - | 56 A | 56 A | 56 A | 56 A | 56 A | 56 A | 56 A |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | - | NO | NO | YES | YES | YES | YES | NO |
| Terminal form | GULL WING | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Is it Rohs certified? | - | - | conform to | conform to | conform to | conform to | - | - | conform to |
| Parts packaging code | - | - | TO-220AB | TO-220AB | TO-252 | TO-252AA | - | - | TO-220AB |
| JEDEC-95 code | - | - | TO-220AB | TO-220AB | TO-252 | TO-252AA | - | - | TO-220AB |
| Peak Reflow Temperature (Celsius) | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED |
| Maximum time at peak reflow temperature | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED |