PHD14NQ20T datasheet, PDF - EEWORLD Datasheet

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PHD14NQ20T: DescriptionTRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size270KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PHD14NQ20T Overview

TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power

PHD14NQ20T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-252
package instruction	PLASTIC, SC-63, DPAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	70 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	14 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

Rev. 03 — 11 March 2002

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHP14NQ20T in SOT78 (TO-220AB)

PHB14NQ20T in SOT404 (D

-PAK)

PHD14NQ20T in SOT428 (D-PAK).

1.2 Features

Low on-state resistance

Fast switching

1.3 Applications

DC to DC converters

General purpose switching

1.4 Quick reference data

= 200 V

DSon

≤

230 mΩ

= 14 A

= 125 W

2. Pinning information

Table 1:

Pinning - SOT78, SOT404, SOT428, simpliﬁed outline and symbol

Description

gate (g)

drain (d)

source (s)

mounting base,

connected to

drain (d)

MBK106

Simpliﬁed outline

[1]

Symbol

MBB076

MBK116

MBK091

Top view

1 2 3

SOT78 (TO-220AB)

[1]

SOT404 (D

-PAK)

SOT428 (D-PAK)

It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.

PHD14NQ20T Related Products

	PHD14NQ20T	PHD14NQ20T,118	PHP14NQ20T,127	934055683127	934057072118	934055772118	PHB14NQ20T	PHB14NQ20T/T3	PHP14NQ20T
Description	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power	MOSFET N-CH 200V 14A DPAK	MOSFET N-CH 200V 14A TO220AB	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	-	-	-	conform to
Maker	NXP	-	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	TO-252	-	TO-220AB	TO-220AB	TO-252AA	-	-	-	TO-220AB
package instruction	PLASTIC, SC-63, DPAK-3	-	PLASTIC, SC-46, 3 PIN	FLANGE MOUNT, R-PSFM-T3	PLASTIC, SMD, SC-63, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3
Contacts	3	-	3	3	3	3	3	3	3
Reach Compliance Code	not_compliant	-	unknown	unknown	unknown	unknown	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	70 mJ	-	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ
Shell connection	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	-	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	14 A	-	14 A	14 A	14 A	14 A	14 A	14 A	14 A
Maximum drain-source on-resistance	0.23 Ω	-	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	-	TO-220AB	TO-220AB	TO-252AA	-	-	-	TO-220AB
JESD-30 code	R-PSSO-G2	-	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3
Number of components	1	-	1	1	1	1	1	1	1
Number of terminals	2	-	3	3	2	2	2	2	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	56 A	-	56 A	56 A	56 A	56 A	56 A	56 A	56 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	NO	NO	YES	YES	YES	YES	NO
Terminal form	GULL WING	-	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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