PHD14NQ20T,118 datasheet, PDF - EEWORLD Datasheet

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PHD14NQ20T,118: DescriptionMOSFET N-CH 200V 14A DPAK; Categorysemiconductor Discrete semiconductor; File Size270KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PHD14NQ20T,118 Overview

MOSFET N-CH 200V 14A DPAK

PHD14NQ20T,118 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	200V
Current - Continuous Drain (Id) at 25°C	14A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	5V，10V
Rds On (maximum value) when different Id, Vgs	230 milliohms @ 7A, 10V
Vgs (th) (maximum value) when different Id	4V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)	38nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	1500pF @ 25V
FET function	-
Power dissipation (maximum)	125W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	DPAK
Package/casing	TO-252-3, DPak (2 leads + tab), SC-63

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PHP/PHB/PHD14NQ20T

TrenchMOS™ standard level FET

Rev. 03 — 11 March 2002

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHP14NQ20T in SOT78 (TO-220AB)

PHB14NQ20T in SOT404 (D

-PAK)

PHD14NQ20T in SOT428 (D-PAK).

1.2 Features

Low on-state resistance

Fast switching

1.3 Applications

DC to DC converters

General purpose switching

1.4 Quick reference data

= 200 V

DSon

≤

230 mΩ

= 14 A

= 125 W

2. Pinning information

Table 1:

Pinning - SOT78, SOT404, SOT428, simpliﬁed outline and symbol

Description

gate (g)

drain (d)

source (s)

mounting base,

connected to

drain (d)

MBK106

Simpliﬁed outline

[1]

Symbol

MBB076

MBK116

MBK091

Top view

1 2 3

SOT78 (TO-220AB)

[1]

SOT404 (D

-PAK)

SOT428 (D-PAK)

It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.

PHD14NQ20T,118 Related Products

	PHD14NQ20T,118	PHP14NQ20T,127	934055683127	PHD14NQ20T	934057072118	934055772118	PHB14NQ20T	PHB14NQ20T/T3	PHP14NQ20T
Description	MOSFET N-CH 200V 14A DPAK	MOSFET N-CH 200V 14A TO220AB	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power	TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	-	-	-	conform to
Maker	-	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Parts packaging code	-	TO-220AB	TO-220AB	TO-252	TO-252AA	-	-	-	TO-220AB
package instruction	-	PLASTIC, SC-46, 3 PIN	FLANGE MOUNT, R-PSFM-T3	PLASTIC, SC-63, DPAK-3	PLASTIC, SMD, SC-63, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3
Contacts	-	3	3	3	3	3	3	3	3
Reach Compliance Code	-	unknown	unknown	not_compliant	unknown	unknown	unknow	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ	70 mJ
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	-	14 A	14 A	14 A	14 A	14 A	14 A	14 A	14 A
Maximum drain-source on-resistance	-	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-252	TO-252AA	-	-	-	TO-220AB
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3
Number of components	-	1	1	1	1	1	1	1	1
Number of terminals	-	3	3	2	2	2	2	2	3
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	56 A	56 A	56 A	56 A	56 A	56 A	56 A	56 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	NO	YES	YES	YES	YES	YES	NO
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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