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PHP14NQ20T

Description
TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size270KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PHP14NQ20T Overview

TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power

PHP14NQ20T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)70 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)14 A
Maximum drain current (ID)14 A
Maximum drain-source on-resistance0.23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)56 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
Rev. 03 — 11 March 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP14NQ20T in SOT78 (TO-220AB)
PHB14NQ20T in SOT404 (D
2
-PAK)
PHD14NQ20T in SOT428 (D-PAK).
1.2 Features
s
Low on-state resistance
s
Fast switching
1.3 Applications
s
DC to DC converters
s
General purpose switching
1.4 Quick reference data
s
V
DS
= 200 V
s
R
DSon
230 mΩ
s
I
D
= 14 A
s
P
D
= 125 W
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, SOT404, SOT428, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
mounting base,
connected to
drain (d)
2
1
MBK106
Simplified outline
[1]
mb
mb
mb
Symbol
d
g
s
MBB076
2
1
3
MBK116
3
MBK091
Top view
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D
2
-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.

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Description TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power MOSFET N-CH 200V 14A DPAK MOSFET N-CH 200V 14A TO220AB TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
Is it Rohs certified? conform to - conform to conform to conform to conform to - - -
Maker NXP - NXP NXP NXP NXP NXP NXP NXP
Parts packaging code TO-220AB - TO-220AB TO-220AB TO-252 TO-252AA - - -
package instruction FLANGE MOUNT, R-PSFM-T3 - PLASTIC, SC-46, 3 PIN FLANGE MOUNT, R-PSFM-T3 PLASTIC, SC-63, DPAK-3 PLASTIC, SMD, SC-63, DPAK-3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3 3 3 3 3 3 3
Reach Compliance Code unknow - unknown unknown not_compliant unknown unknown unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 70 mJ - 70 mJ 70 mJ 70 mJ 70 mJ 70 mJ 70 mJ 70 mJ
Shell connection DRAIN - DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V - 200 V 200 V 200 V 200 V 200 V 200 V 200 V
Maximum drain current (ID) 14 A - 14 A 14 A 14 A 14 A 14 A 14 A 14 A
Maximum drain-source on-resistance 0.23 Ω - 0.23 Ω 0.23 Ω 0.23 Ω 0.23 Ω 0.23 Ω 0.23 Ω 0.23 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB - TO-220AB TO-220AB TO-252 TO-252AA - - -
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 - 1 1 1 1 1 1 1
Number of terminals 3 - 3 3 2 2 2 2 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 56 A - 56 A 56 A 56 A 56 A 56 A 56 A 56 A
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO YES YES YES YES YES
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - -
transistor applications SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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