2N1776A datasheet, PDF - EEWORLD Datasheet

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2N1776A: DescriptionSilicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-64, HERMETIC SEALED PACKAGE-2; CategoryAnalog mixed-signal IC Trigger device; File Size222KB，6 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx; Related ProductsFound18parts with similar functions to 2N1776A

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2N1776A Overview

Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-64, HERMETIC SEALED PACKAGE-2

2N1776A Parametric

Parameter Name	Attribute value
Parts packaging code	TO-64
package instruction	POST/STUD MOUNT, O-MUPM-D2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	15 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	50 mA
JEDEC-95 code	TO-64
JESD-30 code	O-MUPM-D2
Maximum leakage current	4 mA
On-state non-repetitive peak current	60 A
Number of components	1
Number of terminals	2
Maximum on-state current	4700 A
Maximum operating temperature	155 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Maximum rms on-state current	7.4 A
Off-state repetitive peak voltage	300 V
Repeated peak reverse voltage	300 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

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2N1776A Related Products

	2N1776A	2N1773A	2N1774A	2N1777A	2N1770A	2N1775A
Description	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-64, HERMETIC SEALED PACKAGE-2	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 150V V(DRM), 150V V(RRM), 1 Element, TO-64	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-64	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-64	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 25V V(DRM), 25V V(RRM), 1 Element, TO-64	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 250V V(DRM), 250V V(RRM), 1 Element, TO-64
package instruction	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum DC gate trigger current	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA
Maximum DC gate trigger voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	50 mA	50 mA	50 mA	50 mA	50 mA	50 mA
Maximum leakage current	4 mA	8 mA	6 mA	2 mA	9 mA	5 mA
On-state non-repetitive peak current	60 A	60 A	60 A	60 A	60 A	60 A
Maximum on-state current	4700 A	4700 A	4700 A	4700 A	4700 A	4700 A
Maximum operating temperature	155 °C	155 °C	155 °C	150 °C	155 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Off-state repetitive peak voltage	300 V	150 V	200 V	400 V	25 V	250 V
surface mount	NO	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	1	1	1	-	-

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2N1776A Similar Products

Part Number	Manufacturer	Description
2N1776A	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
JANTX2N1776A	Semitronics Corp	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-64, HERMETIC SELALED PACKAGE-2
JAN2N1776A	Semitronics Corp	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 300V V(RRM), 1 Element, TO-64, HERMETIC SELALED PACKAGE-2
2N3027	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18
2N2328	SSDI	Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN
2N6396	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM)
2N6402	Toshiba(东芝)	SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220
C126F	Semitronics Corp	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
BT151X-650R,127	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3
2N1772A	SSDI	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N879	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 0.55A I(T)RMS, 350mA I(T), 100V V(DRM), 1 Element, TO-18, TO-18, 3 PIN
2N1880	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5
C15F	Semitronics Corp	Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64
MCR718	Central Semiconductor	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS
2N2327	New Jersey Semiconductor	Thyristor SCR 250V 15A 3-Pin TO-39
C106E1	Central Semiconductor	4 A, 400 V, SCR, TO-202
2N1772	Semitronics Corp	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-64
CS29-08IO1C	IXYS	Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN

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