BD139G-T60-K datasheet, PDF - EEWORLD Datasheet

BD139G-T60-K: Description1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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BD139G-T60-K Overview

1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	SIP
package instruction	HALOGEN FREE PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	190 MHz

	BD139G-T60-K	BD139L-T60-K	BD139-T60-K	BD139	BUK663R7-75C_15	BD139_09	BUK7607-30B_15	BUK664R8-75C_15
Description	1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	N-channel TrenchMOS FET	1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	N-channel TrenchMOS standard level FET	N-channel TrenchMOS FET
Number of components	1	1	1	1	-	1	-	-
Number of terminals	3	3	3	3	-	3	-	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-hole	-	THROUGH-hole	-	-
Terminal location	SINGLE	SINGLE	SINGLE	single	-	single	-	-
Transistor component materials	SILICON	SILICON	SILICON	silicon	-	silicon	-	-

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