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BD139

Description
1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size30KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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BD139 Overview

1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

BD139 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionTO-126, 3 PIN
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption1.25 W
Transistor typeuniversal power supply
Minimum DC amplification factor25
Rated crossover frequency190 MHz

BD139 Related Products

BD139 BD139L-T60-K BD139-T60-K BD139G-T60-K BUK663R7-75C_15 BD139_09 BUK7607-30B_15 BUK664R8-75C_15
Description 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 N-channel TrenchMOS FET 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 N-channel TrenchMOS standard level FET N-channel TrenchMOS FET
Number of terminals 3 3 3 3 - 3 - -
Terminal form THROUGH-hole THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-hole - -
Terminal location single SINGLE SINGLE SINGLE - single - -
Number of components 1 1 1 1 - 1 - -
Transistor component materials silicon SILICON SILICON SILICON - silicon - -

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Index Files: 381  169  1998  1308  2741  8  4  41  27  56 
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