1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
| Parameter Name | Attribute value |
| Number of terminals | 3 |
| Transistor polarity | NPN |
| Maximum collector current | 1.5 A |
| Maximum Collector-Emitter Voltage | 80 V |
| Processing package description | TO-126, 3 PIN |
| state | ACTIVE |
| packaging shape | Rectangle |
| Package Size | Flange mounting |
| Terminal form | THROUGH-hole |
| terminal coating | tin lead |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | single |
| Shell connection | COLLECTOR |
| Number of components | 1 |
| transistor applications | switch |
| Transistor component materials | silicon |
| Maximum ambient power consumption | 1.25 W |
| Transistor type | universal power supply |
| Minimum DC amplification factor | 25 |
| Rated crossover frequency | 190 MHz |
| BD139 | BD139L-T60-K | BD139-T60-K | BD139G-T60-K | BUK663R7-75C_15 | BD139_09 | BUK7607-30B_15 | BUK664R8-75C_15 | |
|---|---|---|---|---|---|---|---|---|
| Description | 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 | 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 | 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 | 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 | N-channel TrenchMOS FET | 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 | N-channel TrenchMOS standard level FET | N-channel TrenchMOS FET |
| Number of terminals | 3 | 3 | 3 | 3 | - | 3 | - | - |
| Terminal form | THROUGH-hole | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-hole | - | - |
| Terminal location | single | SINGLE | SINGLE | SINGLE | - | single | - | - |
| Number of components | 1 | 1 | 1 | 1 | - | 1 | - | - |
| Transistor component materials | silicon | SILICON | SILICON | SILICON | - | silicon | - | - |