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PMDXB950UPE

Description
20 V, dual P-channel Trench MOSFET
File Size247KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PMDXB950UPE Overview

20 V, dual P-channel Trench MOSFET

DF
N1
0
PMDXB950UPE
10 September 2013
10B
-6
20 V, dual P-channel Trench MOSFET
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R
DSon
= 1.02 Ω
3. Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
R
DSon
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; I
D
= -500 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
-20
8
-500
Unit
V
V
mA
Static characteristics (per transistor)
drain-source on-state
resistance
[1]
2
-
1.02
1.4
Ω
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .
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