28LV011
1 Megabit (128K x 8-Bit) EEPROM
V
CC
V
SS
RES
RES
OE
CE
WE
RES
A0
Y Decoder
Address
Buffer and
Latch
A7
A16
Data Latch
Y Gating
I/O Buffer and
Input Latch
Control Logic Timing
High Voltage
Generator
I/O0
I/O7
RDY/Busy
28LV011
A6
X Decoder
Memory Array
Memory
Logic Diagram
F
EATURES
:
• 3.3V Low Voltage Operation, 128k x 8-bit EEPROM
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single event effects @ 25°C
- SEL > 120 MeV cm
2
/mg (Device)
- SEU > 85 MeV cm
2
/mg(Memory Cells)
- SEU > 18 MeV cm
2
/mg (Write Mode)
- SET > 40 MeV cm
2
/mg (Read Mode)
• Package:
- 32-pin R
AD
-P
AK
® flat package
- JEDEC-approved byte-wide pinout
• High speed:
- 200 and 250 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode:
- 1 to 128 bytes
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
D
ESCRIPTION
:
Maxwell Technologies’ 28LV011 high-density 1 Megabit (128K
x 8-Bit) EEPROM microcircuit features a greater than 100
krad (Si) total dose tolerance, depending upon space mission.
The 28LV011 is capable of in-system electrical byte and page
programmability. It has a 128-byte page programming function
to make its erase and write operations faster. It also features
data polling and a Ready/Busy signal to indicate the comple-
tion of erase and programming operations. In the 28LV011,
hardware data protection is provided with RESET , in addition
to noise protection on the WE signal and write inhibit on power
on and off. Software data protection is implemented using the
JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
Krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies’ self-defined Class
S.
09.10.13 Rev 3
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
1. 28LV011 P
INOUT
D
ESCRIPTION
P
IN
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2
24
22
29
32
16
1
30
S
YMBOL
A0-A16
OE
CE
WE
V
CC
V
SS
RDY/BUSY
RES
D
ESCRIPTION
Address
Output Enable
Chip Enable
Write Enable
Power Supply
Ground
Ready/Busy
Reset
28LV011
T
ABLE
2. 28LV011 A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage (Relative to V
SS
)
Input Voltage (Relative to V
SS
)
Operating Temperature Range
Storage Temperature Range
1. V
IN
min = -3.0V for pulse width < 50ns.
Memory
SYMBOL
MIN
MAX
UNITS
V
CC
V
IN
T
OPR
T
STG
-0.6
-0.5
1
-55
-65
+7.0
+7.0
+125
+150
V
V
°
C
°
C
T
ABLE
3. D
ELTA
L
IMITS
P
ARAMETER
I
CC
1
I
CC
2
I
CC
3A
I
CC
3B
V
ARIATION
±10%
±10%
±10%
±10%
Parameters are measured and recorded as Delts per MIL-STD-883 for
Class S devices, as specified in Table 6.
T
ABLE
4. 28LV011 R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
S
YMBOL
V
CC
V
IL
V
IH
RES_PIN
Operating Temperature Range
1. V
IL
min = -1.0V for pulse width < 50 ns
09.10.13 Rev 3
M
IN
3.0
-0.3
1
2.0
V
CC
-0.5
-55
M
AX
3.6
0.8
V
CC
+0.3
V
CC
+1
+125
U
NITS
V
V
V
H
T
OPR
°
C
All data sheets are subject to change without notice
2
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
T
ABLE
5. 28LV011 C
APACITANCE
(T
A
= 25
°
C, f = 1 MHZ)
P
ARAMETER
Input Capacitance: V
IN
= 0V
1
Output Capacitance: V
OUT
= 0V
1
1. Guaranteed by design.
S
YMBOL
C
IN
C
OUT
M
IN
--
--
28LV011
M
AX
6
12
U
NITS
pF
pF
T
ABLE
6. 28LV011 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
=3.35V ± 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Standby V
CC
Current
Operating V
CC
Current
T
EST
C
ONDITION
V
CC
= 3.6V, V
IN
= 3.6V
V
CC
= 3.6V, V
OUT
= 3.6V/0.4V
CE = V
CC
CE = V
IH
I
OUT
= 0mA, Duty = 100%, Cycle =
1µs at V
CC
= 3.3V
I
OUT
= 0mA, Duty = 100%, Cycle =
150ns at V
CC
= 3.3V
Input Voltage
RES_PIN
Output Voltage
I
OL
= 2.1 mA
I
OH
= -0.4 mA
I
OH
= -0.1mA
1. I
LI
on RES = 100 uA max.
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
V
IL
V
IH
V
H
V
OL
V
OH
V
OH
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
S
YMBOL
I
IL
I
LO
I
CC1
I
CC2
I
CC3
M
IN
--
--
--
--
--
--
--
2.0
V
CC
-0.5
--
2.4
V
CC
-0.3V
M
AX
2
1
2
20
1
6
15
0.8
--
--
0.4
--
V
V
U
NITS
µA
µA
µA
mA
mA
Memory
T
ABLE
7. 28LV011 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Access Time
CE = OE = V
IL
, WE = V
IH
-200
-250
Chip Enable Access Time
OE = V
IL
, WE = V
IH
-200
-250
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
t
CE
9, 10, 11
--
--
200
250
200
250
ns
M
IN
M
AX
U
NITS
ns
09.10.13 Rev 3
All data sheets are subject to change without notice
3
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Output Enable Access Time
CE = V
IL
, WE = V
IH
-200
-250
Output Hold to Address Change
CE = OE = V
IL
, WE = V
IH
-200
-250
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-150
-200
CE = OE = V
IL
, WE = V
IH
-200
-250
RES to Output Delay
3
CE = OE = V
IL
, WE = V
IH
-200
-250
S
YMBOL
t
OE
S
UBGROUPS
9, 10, 11
0
0
t
OH
9, 10, 11
0
0
t
DF
9, 10, 11
0
0
t
DFR
0
0
t
RR
9, 10, 11
0
0
--
--
M
IN
28LV011
M
AX
U
NITS
ns
110
120
ns
T
ABLE
7. 28LV011 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
ns
50
50
300
350
Memory
ns
525
550
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
8. 28LV011 AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Address Setup Time
-200
-250
Chip Enable to Write Setup Time (WE controlled)
-200
-250
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
t
CS
9, 10, 11
0
0
--
--
--
--
ns
M
IN 1
M
AX
U
NITS
ns
09.10.13 Rev 3
All data sheets are subject to change without notice
4
©2013 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28LV011
T
ABLE
8. 28LV011 AC E
LECTRICAL
C
HARACTERISTICS FOR
P
AGE
/B
YTE
E
RASE AND
B
YTE
W
RITE
O
PERATIONS
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C)
P
ARAMETER
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
-200
Address Hold Time
-200
-250
Data Setup Time
-200
-250
Data Hold Time
-150
-200
Chip Enable Hold Time (WE controlled)
-200
-250
Write Enable to Write Setup Time (CE controlled)
-200
-250
Write Enable Hold Time (CE controlled)
-150
-200
Output Enable to Write Setup Time
-200
-250
Output Enable Hold Time
-200
-250
Write Cycle Time
2
-150
-200
Byte Load Window
-200
-250
Byte Load Cycle
-200
-250
S
YMBOL
t
CW
200
250
t
WP
200
250
t
AH
9, 10, 11
125
150
t
DS
9, 10, 11
100
100
t
DH
9, 10, 11
10
10
t
CH
9, 10, 11
0
0
t
WS
9, 10, 11
0
0
t
WH
9, 10, 11
0
0
t
OES
9, 10, 11
0
0
t
OEH
9, 10, 11
0
0
t
WC
9, 10, 11
--
--
t
BL
9, 10, 11
100
100
t
BLC
9, 10, 11
1
1
30
30
--
--
µs
15
15
µs
--
--
ms
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
S
UBGROUPS
9, 10, 11
M
IN 1
M
AX
U
NITS
ns
Memory
09.10.13 Rev 3
All data sheets are subject to change without notice
5
©2013 Maxwell Technologies
All rights reserved.
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