Low Power CMOS Quad Operational Amplifier
| LPC660 | LPC660AIM | LPC660AIN | LPC660AMD | LPC660AMJ/883 | LPC660IM | LPC660IN | |
|---|---|---|---|---|---|---|---|
| Description | Low Power CMOS Quad Operational Amplifier | Low Power CMOS Quad Operational Amplifier | Low Power CMOS Quad Operational Amplifier | Low Power CMOS Quad Operational Amplifier | Low Power CMOS Quad Operational Amplifier | Low Power CMOS Quad Operational Amplifier | Low Power CMOS Quad Operational Amplifier |
| Is it Rohs certified? | - | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
| Parts packaging code | - | SOIC | DIP | DIP | DIP | SOIC | DIP |
| package instruction | - | SOIC-14 | PLASTIC, DIP-14 | SIDE BRAZED, CERAMIC, DIP-14 | DIP, DIP14,.3 | SOIC-14 | DIP, DIP14,.3 |
| Contacts | - | 14 | 14 | 14 | 14 | 14 | 14 |
| Reach Compliance Code | - | _compli | unknow | unknow | unknow | _compli | unknow |
| ECCN code | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Amplifier type | - | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| Architecture | - | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK |
| Maximum average bias current (IIB) | - | 0.000004 µA | 0.000004 µA | 0.00002 µA | 0.00002 µA | 0.000004 µA | 0.000004 µA |
| Minimum Common Mode Rejection Ratio | - | 70 dB | 70 dB | 70 dB | 70 dB | 63 dB | 63 dB |
| Nominal Common Mode Rejection Ratio | - | 83 dB | 83 dB | 83 dB | 83 dB | 83 dB | 83 dB |
| frequency compensation | - | YES | YES | YES | YES | YES | YES |
| Maximum input offset voltage | - | 3300 µV | 3000 µV | 3000 µV | 3000 µV | 6300 µV | 6000 µV |
| JESD-30 code | - | R-PDSO-G14 | R-PDIP-T14 | R-CDIP-T14 | R-CDIP-T14 | R-PDSO-G14 | R-PDIP-T14 |
| JESD-609 code | - | e0 | e0 | e0 | e0 | e0 | e0 |
| length | - | 8.65 mm | 19.18 mm | 19.304 mm | 19.43 mm | 8.65 mm | 19.18 mm |
| low-bias | - | YES | YES | YES | YES | YES | YES |
| low-dissonance | - | NO | NO | NO | NO | NO | NO |
| micropower | - | YES | YES | YES | YES | YES | YES |
| Number of functions | - | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of terminals | - | 14 | 14 | 14 | 14 | 14 | 14 |
| Maximum operating temperature | - | 85 °C | 85 °C | 125 °C | 125 °C | 85 °C | 85 °C |
| Minimum operating temperature | - | -40 °C | -40 °C | -55 °C | -55 °C | -40 °C | -40 °C |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | - | SOP | DIP | DIP | DIP | SOP | DIP |
| Encapsulate equivalent code | - | SOP14,.25 | DIP14,.3 | DIP14,.3 | DIP14,.3 | SOP14,.25 | DIP14,.3 |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | - | 235 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 235 | NOT SPECIFIED |
| power supply | - | 5/15 V | 5/15 V | 5/15 V | 5/15 V | 5/15 V | 5/15 V |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | - | 1.75 mm | 5.08 mm | 4.572 mm | 5.08 mm | 1.75 mm | 5.08 mm |
| minimum slew rate | - | 0.07 V/us | 0.07 V/us | 0.07 V/us | 0.07 V/us | 0.05 V/us | 0.05 V/us |
| Nominal slew rate | - | 0.11 V/us | 0.11 V/us | 0.11 V/us | 0.11 V/us | 0.11 V/us | 0.11 V/us |
| Maximum slew rate | - | 0.23 mA | 0.23 mA | 0.25 mA | 0.25 mA | 0.27 mA | 0.27 mA |
| Supply voltage upper limit | - | 16 V | 16 V | 16 V | 16 V | 16 V | 16 V |
| Nominal supply voltage (Vsup) | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | - | YES | NO | NO | NO | YES | NO |
| technology | - | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | - | INDUSTRIAL | INDUSTRIAL | MILITARY | MILITARY | INDUSTRIAL | INDUSTRIAL |
| Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| Terminal pitch | - | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm |
| Terminal location | - | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | - | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 30 | NOT SPECIFIED |
| Nominal Uniform Gain Bandwidth | - | 350 kHz | 350 kHz | 350 kHz | 350 kHz | 350 kHz | 350 kHz |
| Minimum voltage gain | - | 100000 | 100000 | 100000 | 100000 | 50000 | 50000 |
| width | - | 3.9 mm | 7.62 mm | 7.62 mm | 7.62 mm | 3.9 mm | 7.62 mm |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - | 1 |
| Maximum bias current (IIB) at 25C | - | - | 0.00002 µA | 0.00002 µA | 0.00002 µA | - | 0.00002 µA |