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LPC660IM

Description
Low Power CMOS Quad Operational Amplifier
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size605KB,17 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Related ProductsFound19parts with similar functions to LPC660IM
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LPC660IM Overview

Low Power CMOS Quad Operational Amplifier

LPC660IM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
Parts packaging codeSOIC
package instructionSOIC-14
Contacts14
Reach Compliance Code_compli
ECCN codeEAR99
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Maximum average bias current (IIB)0.000004 µA
Minimum Common Mode Rejection Ratio63 dB
Nominal Common Mode Rejection Ratio83 dB
frequency compensationYES
Maximum input offset voltage6300 µV
JESD-30 codeR-PDSO-G14
JESD-609 codee0
length8.65 mm
low-biasYES
low-dissonanceNO
micropowerYES
Humidity sensitivity level1
Negative supply voltage upper limit
Nominal Negative Supply Voltage (Vsup)
Number of functions4
Number of terminals14
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP14,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
method of packingRAIL
Peak Reflow Temperature (Celsius)235
power supply5/15 V
Certification statusNot Qualified
Maximum seat height1.75 mm
minimum slew rate0.05 V/us
Nominal slew rate0.11 V/us
Maximum slew rate0.27 mA
Supply voltage upper limit16 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
Nominal Uniform Gain Bandwidth350 kHz
Minimum voltage gain50000
width3.9 mm

LPC660IM Related Products

LPC660IM LPC660 LPC660AIM LPC660AIN LPC660AMD LPC660AMJ/883 LPC660IN
Description Low Power CMOS Quad Operational Amplifier Low Power CMOS Quad Operational Amplifier Low Power CMOS Quad Operational Amplifier Low Power CMOS Quad Operational Amplifier Low Power CMOS Quad Operational Amplifier Low Power CMOS Quad Operational Amplifier Low Power CMOS Quad Operational Amplifier
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible
Maker National Semiconductor(TI ) - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
Parts packaging code SOIC - SOIC DIP DIP DIP DIP
package instruction SOIC-14 - SOIC-14 PLASTIC, DIP-14 SIDE BRAZED, CERAMIC, DIP-14 DIP, DIP14,.3 DIP, DIP14,.3
Contacts 14 - 14 14 14 14 14
Reach Compliance Code _compli - _compli unknow unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
Amplifier type OPERATIONAL AMPLIFIER - OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK - VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Maximum average bias current (IIB) 0.000004 µA - 0.000004 µA 0.000004 µA 0.00002 µA 0.00002 µA 0.000004 µA
Minimum Common Mode Rejection Ratio 63 dB - 70 dB 70 dB 70 dB 70 dB 63 dB
Nominal Common Mode Rejection Ratio 83 dB - 83 dB 83 dB 83 dB 83 dB 83 dB
frequency compensation YES - YES YES YES YES YES
Maximum input offset voltage 6300 µV - 3300 µV 3000 µV 3000 µV 3000 µV 6000 µV
JESD-30 code R-PDSO-G14 - R-PDSO-G14 R-PDIP-T14 R-CDIP-T14 R-CDIP-T14 R-PDIP-T14
JESD-609 code e0 - e0 e0 e0 e0 e0
length 8.65 mm - 8.65 mm 19.18 mm 19.304 mm 19.43 mm 19.18 mm
low-bias YES - YES YES YES YES YES
low-dissonance NO - NO NO NO NO NO
micropower YES - YES YES YES YES YES
Number of functions 4 - 4 4 4 4 4
Number of terminals 14 - 14 14 14 14 14
Maximum operating temperature 85 °C - 85 °C 85 °C 125 °C 125 °C 85 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -55 °C -55 °C -40 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
encapsulated code SOP - SOP DIP DIP DIP DIP
Encapsulate equivalent code SOP14,.25 - SOP14,.25 DIP14,.3 DIP14,.3 DIP14,.3 DIP14,.3
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 235 - 235 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5/15 V - 5/15 V 5/15 V 5/15 V 5/15 V 5/15 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.75 mm - 1.75 mm 5.08 mm 4.572 mm 5.08 mm 5.08 mm
minimum slew rate 0.05 V/us - 0.07 V/us 0.07 V/us 0.07 V/us 0.07 V/us 0.05 V/us
Nominal slew rate 0.11 V/us - 0.11 V/us 0.11 V/us 0.11 V/us 0.11 V/us 0.11 V/us
Maximum slew rate 0.27 mA - 0.23 mA 0.23 mA 0.25 mA 0.25 mA 0.27 mA
Supply voltage upper limit 16 V - 16 V 16 V 16 V 16 V 16 V
Nominal supply voltage (Vsup) 5 V - 5 V 5 V 5 V 5 V 5 V
surface mount YES - YES NO NO NO NO
technology CMOS - CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL - INDUSTRIAL INDUSTRIAL MILITARY MILITARY INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 1.27 mm - 1.27 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL - DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 - 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Nominal Uniform Gain Bandwidth 350 kHz - 350 kHz 350 kHz 350 kHz 350 kHz 350 kHz
Minimum voltage gain 50000 - 100000 100000 100000 100000 50000
width 3.9 mm - 3.9 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
Base Number Matches - - 1 1 1 1 1
Maximum bias current (IIB) at 25C - - - 0.00002 µA 0.00002 µA 0.00002 µA 0.00002 µA

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