LPC660AIM datasheet, PDF - EEWORLD Datasheet

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LPC660AIM: DescriptionLow Power CMOS Quad Operational Amplifier; CategoryAnalog mixed-signal IC Amplifier circuit; File Size605KB，17 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com; Related ProductsFound20parts with similar functions to LPC660AIM

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LPC660AIM Overview

Low Power CMOS Quad Operational Amplifier

LPC660AIM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Parts packaging code	SOIC
package instruction	SOIC-14
Contacts	14
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Amplifier type	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.000004 µA
Minimum Common Mode Rejection Ratio	70 dB
Nominal Common Mode Rejection Ratio	83 dB
frequency compensation	YES
Maximum input offset voltage	3300 µV
JESD-30 code	R-PDSO-G14
JESD-609 code	e0
length	8.65 mm
low-bias	YES
low-dissonance	NO
micropower	YES
Humidity sensitivity level	1
Negative supply voltage upper limit
Nominal Negative Supply Voltage (Vsup)
Number of functions	4
Number of terminals	14
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP14,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
method of packing	RAIL
Peak Reflow Temperature (Celsius)	235
power supply	5/15 V
Certification status	Not Qualified
Maximum seat height	1.75 mm
minimum slew rate	0.07 V/us
Nominal slew rate	0.11 V/us
Maximum slew rate	0.23 mA
Supply voltage upper limit	16 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Nominal Uniform Gain Bandwidth	350 kHz
Minimum voltage gain	100000
width	3.9 mm
Base Number Matches	1

LPC660AIM Related Products

	LPC660AIM	LPC660	LPC660AIN	LPC660AMD	LPC660AMJ/883	LPC660IM	LPC660IN
Description	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	National Semiconductor（TI ）	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
Parts packaging code	SOIC	-	DIP	DIP	DIP	SOIC	DIP
package instruction	SOIC-14	-	PLASTIC, DIP-14	SIDE BRAZED, CERAMIC, DIP-14	DIP, DIP14,.3	SOIC-14	DIP, DIP14,.3
Contacts	14	-	14	14	14	14	14
Reach Compliance Code	_compli	-	unknow	unknow	unknow	_compli	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Amplifier type	OPERATIONAL AMPLIFIER	-	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK	-	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.000004 µA	-	0.000004 µA	0.00002 µA	0.00002 µA	0.000004 µA	0.000004 µA
Minimum Common Mode Rejection Ratio	70 dB	-	70 dB	70 dB	70 dB	63 dB	63 dB
Nominal Common Mode Rejection Ratio	83 dB	-	83 dB	83 dB	83 dB	83 dB	83 dB
frequency compensation	YES	-	YES	YES	YES	YES	YES
Maximum input offset voltage	3300 µV	-	3000 µV	3000 µV	3000 µV	6300 µV	6000 µV
JESD-30 code	R-PDSO-G14	-	R-PDIP-T14	R-CDIP-T14	R-CDIP-T14	R-PDSO-G14	R-PDIP-T14
JESD-609 code	e0	-	e0	e0	e0	e0	e0
length	8.65 mm	-	19.18 mm	19.304 mm	19.43 mm	8.65 mm	19.18 mm
low-bias	YES	-	YES	YES	YES	YES	YES
low-dissonance	NO	-	NO	NO	NO	NO	NO
micropower	YES	-	YES	YES	YES	YES	YES
Number of functions	4	-	4	4	4	4	4
Number of terminals	14	-	14	14	14	14	14
Maximum operating temperature	85 °C	-	85 °C	125 °C	125 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-55 °C	-55 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	-	DIP	DIP	DIP	SOP	DIP
Encapsulate equivalent code	SOP14,.25	-	DIP14,.3	DIP14,.3	DIP14,.3	SOP14,.25	DIP14,.3
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	235	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	235	NOT SPECIFIED
power supply	5/15 V	-	5/15 V	5/15 V	5/15 V	5/15 V	5/15 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.75 mm	-	5.08 mm	4.572 mm	5.08 mm	1.75 mm	5.08 mm
minimum slew rate	0.07 V/us	-	0.07 V/us	0.07 V/us	0.07 V/us	0.05 V/us	0.05 V/us
Nominal slew rate	0.11 V/us	-	0.11 V/us	0.11 V/us	0.11 V/us	0.11 V/us	0.11 V/us
Maximum slew rate	0.23 mA	-	0.23 mA	0.25 mA	0.25 mA	0.27 mA	0.27 mA
Supply voltage upper limit	16 V	-	16 V	16 V	16 V	16 V	16 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V
surface mount	YES	-	NO	NO	NO	YES	NO
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	-	INDUSTRIAL	MILITARY	MILITARY	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal pitch	1.27 mm	-	2.54 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	350 kHz	-	350 kHz	350 kHz	350 kHz	350 kHz	350 kHz
Minimum voltage gain	100000	-	100000	100000	100000	50000	50000
width	3.9 mm	-	7.62 mm	7.62 mm	7.62 mm	3.9 mm	7.62 mm
Base Number Matches	1	-	1	1	1	-	1
Maximum bias current (IIB) at 25C	-	-	0.00002 µA	0.00002 µA	0.00002 µA	-	0.00002 µA

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LPC660AIM Similar Products

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TLC27M4IDR	Texas Instruments(德州仪器)	Quad Precision Single Supply Low-Power Operational Amplifier 14-SOIC -40 to 85
TLC27L4BCDR	Texas Instruments(德州仪器)	LinCMOS™ Precision Quad Operational Amplifier 14-SOIC 0 to 70
TLC2264CD	Texas Instruments(德州仪器)	Quad Advanced LinCMOS™ Rail-To-Rail Operational Amplifier 14-SOIC 0 to 70
TS27M4CDT	ST(意法半导体)	增益带宽积（GBP）：1MHz 放大器组数：4 运放类型：General Purpose 各通道功耗：- 压摆率（SR）：0.6 V/us 电源电压：3V ~ 16V, ±1.5V ~ 8V
TS27M4IDT	ST(意法半导体)	Operational Amplifiers - Op Amps Quad Prec Low-Power
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TLC27M4CNSR	Texas Instruments(德州仪器)	Quad Precision Single Supply Low-Power Operational Amplifier 14-SO 0 to 70
TLC27L4BCD	Texas Instruments(德州仪器)	LinCMOS™ Precision Quad Operational Amplifier 14-SOIC 0 to 70
TLC27M4CNS	Texas Instruments(德州仪器)	Quad Precision Single Supply Low-Power Operational Amplifier 14-SO 0 to 70
TLC27L9ID	Texas Instruments(德州仪器)	Quad Precision Single Supply Micropower Operational Amplifier 14-SOIC -40 to 85

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