LPC660AMD datasheet, PDF - EEWORLD Datasheet

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LPC660AMD: DescriptionLow Power CMOS Quad Operational Amplifier; CategoryAnalog mixed-signal IC Amplifier circuit; File Size605KB，17 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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LPC660AMD Overview

Low Power CMOS Quad Operational Amplifier

LPC660AMD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Parts packaging code	DIP
package instruction	SIDE BRAZED, CERAMIC, DIP-14
Contacts	14
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Amplifier type	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.00002 µA
Maximum bias current (IIB) at 25C	0.00002 µA
Minimum Common Mode Rejection Ratio	70 dB
Nominal Common Mode Rejection Ratio	83 dB
frequency compensation	YES
Maximum input offset voltage	3000 µV
JESD-30 code	R-CDIP-T14
JESD-609 code	e0
length	19.304 mm
low-bias	YES
low-dissonance	NO
micropower	YES
Negative supply voltage upper limit
Nominal Negative Supply Voltage (Vsup)
Number of functions	4
Number of terminals	14
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP14,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5/15 V
Certification status	Not Qualified
Maximum seat height	4.572 mm
minimum slew rate	0.07 V/us
Nominal slew rate	0.11 V/us
Maximum slew rate	0.25 mA
Supply voltage upper limit	16 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	350 kHz
Minimum voltage gain	100000
width	7.62 mm
Base Number Matches	1

LPC660AMD Related Products

	LPC660AMD	LPC660	LPC660AIM	LPC660AIN	LPC660AMJ/883	LPC660IM	LPC660IN
Description	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier	Low Power CMOS Quad Operational Amplifier
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	National Semiconductor（TI ）	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
Parts packaging code	DIP	-	SOIC	DIP	DIP	SOIC	DIP
package instruction	SIDE BRAZED, CERAMIC, DIP-14	-	SOIC-14	PLASTIC, DIP-14	DIP, DIP14,.3	SOIC-14	DIP, DIP14,.3
Contacts	14	-	14	14	14	14	14
Reach Compliance Code	unknow	-	_compli	unknow	unknow	_compli	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Amplifier type	OPERATIONAL AMPLIFIER	-	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK	-	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.00002 µA	-	0.000004 µA	0.000004 µA	0.00002 µA	0.000004 µA	0.000004 µA
Maximum bias current (IIB) at 25C	0.00002 µA	-	-	0.00002 µA	0.00002 µA	-	0.00002 µA
Minimum Common Mode Rejection Ratio	70 dB	-	70 dB	70 dB	70 dB	63 dB	63 dB
Nominal Common Mode Rejection Ratio	83 dB	-	83 dB	83 dB	83 dB	83 dB	83 dB
frequency compensation	YES	-	YES	YES	YES	YES	YES
Maximum input offset voltage	3000 µV	-	3300 µV	3000 µV	3000 µV	6300 µV	6000 µV
JESD-30 code	R-CDIP-T14	-	R-PDSO-G14	R-PDIP-T14	R-CDIP-T14	R-PDSO-G14	R-PDIP-T14
JESD-609 code	e0	-	e0	e0	e0	e0	e0
length	19.304 mm	-	8.65 mm	19.18 mm	19.43 mm	8.65 mm	19.18 mm
low-bias	YES	-	YES	YES	YES	YES	YES
low-dissonance	NO	-	NO	NO	NO	NO	NO
micropower	YES	-	YES	YES	YES	YES	YES
Number of functions	4	-	4	4	4	4	4
Number of terminals	14	-	14	14	14	14	14
Maximum operating temperature	125 °C	-	85 °C	85 °C	125 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-	-40 °C	-40 °C	-55 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	-	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	-	SOP	DIP	DIP	SOP	DIP
Encapsulate equivalent code	DIP14,.3	-	SOP14,.25	DIP14,.3	DIP14,.3	SOP14,.25	DIP14,.3
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	235	NOT SPECIFIED	NOT SPECIFIED	235	NOT SPECIFIED
power supply	5/15 V	-	5/15 V	5/15 V	5/15 V	5/15 V	5/15 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.572 mm	-	1.75 mm	5.08 mm	5.08 mm	1.75 mm	5.08 mm
minimum slew rate	0.07 V/us	-	0.07 V/us	0.07 V/us	0.07 V/us	0.05 V/us	0.05 V/us
Nominal slew rate	0.11 V/us	-	0.11 V/us	0.11 V/us	0.11 V/us	0.11 V/us	0.11 V/us
Maximum slew rate	0.25 mA	-	0.23 mA	0.23 mA	0.25 mA	0.27 mA	0.27 mA
Supply voltage upper limit	16 V	-	16 V	16 V	16 V	16 V	16 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V
surface mount	NO	-	YES	NO	NO	YES	NO
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	-	INDUSTRIAL	INDUSTRIAL	MILITARY	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal pitch	2.54 mm	-	1.27 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	-	30	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	350 kHz	-	350 kHz	350 kHz	350 kHz	350 kHz	350 kHz
Minimum voltage gain	100000	-	100000	100000	100000	50000	50000
width	7.62 mm	-	3.9 mm	7.62 mm	7.62 mm	3.9 mm	7.62 mm
Base Number Matches	1	-	1	1	1	-	1

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