ES3AF THRU ES3JF
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
SMAF
Cathode Band
Top View
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
Glass passivated chip junction
0.106(2.70)
0.094(2.40)
0.063(1.60)
0.051(1.30)
0.146(3.7)
0.130(3.3)
0.051(1.30)
0.043(1.10)
0.0091(0.23)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case
: JEDEC SMAF molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0018
ounce, 0.064 grams
0.193(4.90)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
3.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
0.95
50.0
1.25
5.0
200.0
35
60.0
40.0
-50 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES ES3AF THRU ES3JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
+0.5
D.U.T
25Vdc
approx
PULSE
GENERATOR
Note 2
0
-0.25
1 ohm
NonInductive
t
rr
+
-
OSCILLOSCOPE
Note 1
-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
Average Forward Current (A)
3.5
300
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
I
R
- Reverse Current (
μ
A)
3.0
2.4
1.8
1.2
0.6
0.0
25
50
75
100
125
150
175
Single phase half wave resistive
or inductive P.C.B mounted on
0.315×0. 315"(8.0
×8.
0mm )
pad areas
100
T
J
=125
°C
10
T
J
=75
°C
1.0
T
J
=25
°C
0.1
0
20
40
60
80
100
Lead Temperature (°C)
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
Instaneous Forward Current (A)
10
45
Fig.5 Typical Junction Capacitance
1.0
ES3AF
ES3EF
Junction Capacitance ( pF)
T
J
=25
°C
40
35
30
25
20
15
10
0.1
1
10
100
T
J
=25
°C
f = 1.0MHz
V
sig
= 50mV
p-p
0.1
ES3JF
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
Instaneous Forward Voltage (V)
Reverse Voltage (V)
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
MCU
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