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NCP51100GEVB: NCP51100 Evaluation Board

NCP51100GEVB: NCP51100 EVB

Overview

The NCP51100 2 A gate driver is designed to drive an N-channel enhancement-mode MOSFET in low -side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with TTL input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. The NCP51100 delivers fast MOSFET switching performance, which helps maximize efficiency in high frequency power converter designs. NCP51100 drivers incorporate MillerDriveTM architecture for the final output stage. This bipolar?MOSFET combination provides high peak current during the Miller plateau stage of the MOSFET turn-on / turn-off process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability. The NCP51100 is available in industry standard, 5-pin, SOT23.

Design Files

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Update:2025-06-04 04:09:31

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