2N6399 datasheet, PDF - EEWORLD Datasheet

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2N6399: DescriptionSilicon Controlled Rectifier, 12A I(T)RMS, 5000mA I(T), 800V V(DRM), 1 Element, TO-220AB; CategoryAnalog mixed-signal IC Trigger device; File Size714KB，10 Pages; ManufacturerLoras Industries Inc.; Related ProductsFound19parts with similar functions to 2N6399

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2N6399 Overview

Silicon Controlled Rectifier, 12A I(T)RMS, 5000mA I(T), 800V V(DRM), 1 Element, TO-220AB

2N6399 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	30 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	35 mA
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum leakage current	2 mA
On-state non-repetitive peak current	100 A
Number of components	1
Number of terminals	3
Maximum on-state current	5000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	12 A
Maximum repetitive peak off-state leakage current	10 µA
Off-state repetitive peak voltage	800 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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2N6399 Related Products

	2N6399	2N6172	2N6173	2N6174	C106M1	C106D1	S6001L	S4016R	S0525R	S0308F1
Description	Silicon Controlled Rectifier, 12A I(T)RMS, 5000mA I(T), 800V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 200V V(DRM), 1 Element	Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 400V V(DRM), 1 Element	Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 600V V(DRM), 1 Element	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 600V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 16A I(T)RMS, 16000mA I(T), 400V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	ANODE	ISOLATED	ISOLATED	ISOLATED	ANODE	ANODE	ISOLATED	ANODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	30 mA	40 mA	40 mA	40 mA	0.2 mA	0.2 mA	10 mA	30 mA	30 mA	15 mA
Maximum DC gate trigger voltage	1.5 V	1.6 V	1.6 V	1.6 V	0.8 V	0.8 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	35 mA	50 mA	50 mA	50 mA	3 mA	3 mA	20 mA	40 mA	40 mA	30 mA
JESD-30 code	R-PSFM-T3	O-MUPM-D2	O-MUPM-D2	O-MUPM-D2	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Maximum leakage current	2 mA	5.5 mA	5 mA	5 mA	0.1 mA	0.1 mA	1 mA	0.5 mA	1 mA	0.2 mA
On-state non-repetitive peak current	100 A	350 A	350 A	350 A	20 A	20 A	30 A	160 A	300 A	100 A
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	2	2	2	3	3	3	3	3	3
Maximum on-state current	5000 A	11000 A	11000 A	11000 A	4000 A	4000 A	1600 A	16000 A	25000 A	8000 A
Maximum operating temperature	125 °C	100 °C	100 °C	100 °C	110 °C	110 °C	110 °C	110 °C	110 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	PLASTIC/EPOXY	METAL	METAL	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND	ROUND	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	12 A	35 A	35 A	35 A	4 A	4 A	1.6 A	16 A	25 A	8 A
Maximum repetitive peak off-state leakage current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Off-state repetitive peak voltage	800 V	200 V	400 V	600 V	600 V	400 V	600 V	400 V	50 V	30 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	SOLDER LUG	SOLDER LUG	SOLDER LUG	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	UPPER	UPPER	UPPER	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Is it Rohs certified?	incompatible	-	-	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
JEDEC-95 code	TO-220AB	-	-	-	TO-202AB	TO-202AB	TO-220AB	TO-220AB	TO-220AB	TO-202AB
JESD-609 code	e0	-	-	-	e0	e0	e0	e0	e0	e0
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	Tin/Lead (Sn/Pb)	-	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
package instruction	-	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Maker	-	-	-	-	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.

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2N6399 Similar Products

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2N6399G	Littelfuse	THYRISTOR SCR 12A 800V TO220AB
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BT151-800C	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3
BT151S-800R	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3/2
MCR12NG	Littelfuse	THYRISTOR SCR 12A 800V TO220AB
MCR12N	Rochester Electronics	12A, 800V, SCR, TO-220AB, CASE 221A-09, 3 PIN
MCR12DCNT4G	Littelfuse	通态电流(It (RMS)) (Max)：12A 通态电流 (It (AV)) (Max)：7.8A 断态电压Vdrm：800V 栅极触发电压：1V 类型：单向可控硅栅极触发电流：20mA
MCR12LN	Digitron	SILICON CONTROLLED RECTIFIERS
TN1215-800G-TR	ST(意法半导体)	通态电流(It (RMS)) (Max)：12A 通态电流 (It (AV)) (Max)：8A 断态电压Vdrm：800V 栅极触发电压：1.3V 类型：单向可控硅栅极触发电流：15mA
BT151-800R,127	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, PLASTIC, SC-46, 3 PIN
TN1215-800B-TR	ST(意法半导体)
TN1215-800G	ST(意法半导体)	scr
MCR12LNG	Rochester Electronics	12A, 800V, SCR, TO-220AB, CASE 221A-09, 3 PIN

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