Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB applications
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in Residual Current Devices/ Ground
Fault Interrupters/ Leakage Current
Circuit Breakers (RCD/ GFI/ LCCB)
applications where a minimum I
GT
limit
is needed. These devices may be
interfaced directly to microcontrollers,
logic integrated circuits and other low
power gate trigger circuits.
BT168 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT168
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
B
200
0.5
0.8
8
D
400
0.5
0.8
8
E
500
0.5
0.8
8
G
600
0.5
0.8
8
V
A
A
A
PINNING - TO92 variant
PIN
1
2
3
DESCRIPTION
anode
gate
cathode
PIN CONFIGURATION
SYMBOL
a
k
3 2 1
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
lead
≤
83 ˚C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
j
= 25 ˚C prior to surge
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 2001
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB Applications
THERMAL RESISTANCES
SYMBOL
R
th j-lead
R
th j-a
PARAMETER
Thermal resistance
junction to lead
Thermal resistance
junction to ambient
pcb mounted; lead length = 4mm
CONDITIONS
MIN.
-
-
BT168 series
TYP.
-
150
MAX.
60
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ
I
T
= 1 A
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= V
DRM(max)
; I
T
= 10 mA; T
j
= 125 ˚C;
gate open circuit
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C;
R
GK
= 1 kΩ
MIN.
20
-
-
-
-
0.2
-
TYP.
50
2
2
1.2
0.5
0.3
0.05
MAX.
200
6
5
1.35
0.8
-
0.1
UNIT
µA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
t
q
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; R
GK
= 1 kΩ
I
TM
= 2 A; V
D
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/µs
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C;
I
TM
= 1.6 A; V
R
= 35 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
MIN.
500
-
-
TYP.
800
2
100
MAX.
-
-
-
UNIT
V/µs
µs
µs
September 2001
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB Applications
BT168 series
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ptot / W
conduction form
angle
factor
degrees
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
Tc(max) / C
77
a = 1.57
83
1.9
2.2
2.8
89
95
101
107
113
10
ITSM / A
IT
I TSM
8
time
T
Tj initial = 25 C max
6
4
4
2
119
0
0.1
0.2
0.3
0.4
IF(AV) / A
0.5
0.6
125
0.7
0
1
10
100
Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where
a = form factor = I
T(RMS)
/ I
T(AV)
.
ITSM / A
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
2
IT(RMS) / A
1.5
100
1
10
IT
T
I TSM
0.5
time
Tj initial = 25 C max
1
10us
100us
T/s
1ms
10ms
0
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
IT(RMS) / A
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead
≤
83˚C.
VGT(Tj)
VGT(25 C)
1
1.6
83 C
0.8
1.4
1.2
1
0.6
0.4
0.8
0.2
0.6
0
50
Tlead / C
100
150
0
-50
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus lead temperature, T
lead
.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 2001
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB Applications
BT168 series
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
5
IT / A
Tj = 125 C
Tj = 25 C
4
Vo = 1.067 V
Rs = 0.187 ohms
typ
max
3
2
1
1
0.5
0
-50
0
0
0.5
1
VT / V
1.5
2
2.5
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
100
Zth j-lead (K/W)
3
2.5
2
10
1
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
P
D
tp
0.1
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
, R
GK
= 1 kΩ.
IH(Tj)
IH(25 C)
Fig.11. Transient thermal impedance Z
th j-lead
, versus
pulse width t
p
.
dVD/dt (V/us)
10000
3
2.5
RGK = 1 kohms
1000
2
1.5
1
0.5
0
-50
10
0
50
100
150
100
0
50
Tj / C
100
150
Tj / C
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
, R
GK
= 1 kΩ.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
September 2001
4
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
logic level for RCD/ GFI/ LCCB Applications
MECHANICAL DATA
Plastic single-ended leaded (through hole) package; 3 leads
BT168 series
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g
Notes
1. Epoxy meets UL94 V0 at 1/8".
September 2001
5
Rev 1.200
Microcontroller MCU
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