Three-level, three-phase SiC AC/DC converter reference design

This reference design outlines how to implement a three-stage, three-phase SiC-based AC/DC converter with bidirectional functionality. The high switching frequency of 50kHz reduces the size of the magnetic components in the filter design and therefore increases the power density. SiC MOSFETs with switching losses enable higher DC bus voltages up to 800V and lower switching losses, with peak efficiencies greater than 97%. This design can be configured as a two-stage or three-stage rectifier. For design information on DC/AC implementation, see TIDA-01606 .

The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices in all operating modes.

characteristic

• ●Rated nominal input peak reaches 380-400VAC, 800V DC output
• ● When connected to 400VAC 50Hz or 60Hz power grid, the maximum output power is 10kW or 10kVA
• ● High voltage (1200V) AC/DC full-bridge converter based on SiC MOSFET, peak efficiency > 97%
• ● Compact filter with switching rectifier frequency 50kHz
• ● Isolated driver ISO5852S with reinforced isolation for driving high-voltage SiC MOSFETs, and UCC5320S for driving intermediate Si IGBTs
• ● Use AMC1301 for isolated current sensing to implement load current monitoring
• ● TMS320F28379D control card can realize digital control