newrudeman

CN0285

Wideband Low Error Vector Magnitude (EVM) Direct Conversion Transmitter

 
Overview

Circuit functions and advantages

This circuit is a complete implementation of the analog part of a broadband direct conversion transmitter (analog baseband input, RF output). This circuit supports RF frequencies ranging from 500 MHz to 4.4 GHz through the use of a phase-locked loop (PLL) and a wideband integrated voltage-controlled oscillator (VCO). Harmonic filtering from the PLL local oscillator (LO) ensures excellent quadrature accuracy, sideband suppression and low EVM.

Figure 1. Direct conversion transmitter (schematic diagram: all connections and decoupling not shown)

 

Figure 2. CN-0285 direct conversion transmitter evaluation board

 

Low-noise, low-dropout regulators (LDOs) ensure that the power management scheme has no adverse impact on phase noise and EVM. This combination of devices provides industry-leading direct conversion transmitter performance from 500 MHz to 4.4 GHz.

Circuit description

The circuit shown in Figure 1 uses a fully integrated fractional-N PLL IC ADF4351 and a wideband transmit modulator ADL5375 . The ADF4351 provides the LO signal to the transmit quadrature modulator ADL5375, which upconverts the analog I/Q signal to an RF signal. Together, the two devices provide a wideband baseband I/Q to RF transmit solution. The ADF4351 is powered by an ultralow noise 3.3 V ADP150 regulator for optimal LO phase noise performance. The ADL5375 is powered by a 5 V ADP3334 LDO. The ADP150 LDO's output voltage noise is only 9 μV rms, helping to optimize VCO phase noise and reduce the effects of VCO pushing (equivalent to power supply rejection).

The ADF4351 RF output needs to be filtered to attenuate the harmonic levels and minimize the error of the ADL5375 quadrature generation module. According to measurements and simulations, it is known that odd-order harmonics contribute more to quadrature error than even-order harmonics; if odd-order harmonics are attenuated below −30 dBc, sideband suppression performance of −40 dBc or better can be achieved . The ADF4351 data sheet gives its second harmonic (2H) and third harmonic (3H) levels as shown in Table 1.

To get the third harmonic below −30 dBc, approximately 20 dB of attenuation is required.

Table 1. ADF4351 RF output harmonic levels (unfiltered)
 Harmonic components
 Value (dBc)
 describe
 second
 -19
 Fundamental VCO output
 third
 -13
 Fundamental VCO output
 second
 -20
 Divided VCO output
 third
 -10
 Divided VCO output

This circuit offers four different filter options to suit four different frequency bands. These filters are designed with a 100 Ω differential input (ADF4351 RF output properly matched) and a 50 Ω differential output (ADL5375 LOIN differential impedance). And use the Chebyshev response to get the best filter roll-off, but the ripple in the passband will be increased.

The schematic diagram of the filter is shown in Figure 3. This topology is flexible and can use a fully differential filter to minimize component count, a single-ended filter for each output, or a combination of the two. We found that for higher frequencies (>2 GHz), the series inductance value of two single-ended filters is twice the inductance value of a fully differential filter, thus reducing the impact of device parasitics and providing optimal performance. For lower frequencies (<2 GHz), fully differential filters are sufficient.

The ADF4351 output matching includes the Z BIAS pull-up resistor, and the decoupling capacitor of the power node also plays a role. To achieve broadband matching, it is recommended to use a resistive load (Z BIAS = 50 Ω) or to connect a resistive load in parallel with the reactive load of Z BIAS . The latter provides slightly higher output power, depending on the inductor chosen. Note that the shunt resistor can be placed at C1c as a differential component (i.e., 100 Ω) to minimize board space (see Type B filter in Table 2).

Design the filter so that the cutoff frequency is approximately 1.2 to 1.5 times the highest frequency in the band of interest. This cutoff frequency allows some margin in the design because typically the cutoff frequency will be lower than the design value due to parasitic effects. Printed circuit board (PCB) parasitics can be simulated in electromagnetic (EM) simulation tools for improved accuracy.

Figure 3. ADF4351 RF output filter schematic

 

Table 2. ADF4351 RF Output Filter Component Values ​​(DNI = Not Inserted)
 Frequency range(MHz)
 Z BIAS
 L1(nH)
 L2(nH)
 C1a(pF)
 C1c(pF)
 C2a(pF)
 C2c(pF)
 C3a(pF)
 C3c(pF)
 500 to 1300 (Type A filter)
 27nH||50Ω
 3.9
 3.9
 DNI
 4.7
 DNI
 5.6
 DNI
 3.3
 850 to 2450 (Type B filter)
 19 nH||(100Ω, position C1c)
 2.7
 2.7
 3.3
 100Ω
 4.7
 DNI
 3.3
 DNI
 1250 to 2800 (filter type C)
 50Ω
 0Ω
 3.6
 DNI
 DNI
 2.2
 DNI
 1.5
 DNI
 2800 to 4400 (filter type D)
 3.9nH
 0Ω
 0Ω
 DNI
 DNI
 DNI
 DNI
 DNI
 DNI

As can be seen from Table 2, at lower frequencies below 1250 MHz, a fifth-order filter is required. For frequencies from 1.25 GHz to 2.8 GHz, a third-order filter is sufficient. For frequencies above 2.8 GHz, filtering is not required because the harmonic levels are very low and sufficient to meet sideband suppression requirements.

Figure 4. Sideband suppression of type B filter (850 MHz to 2450 MHz)

 

Figure 5. EVM diagram

 

For a circuit using a Type B filter (800 MHz to 2,400 MHz), the sideband suppression performance versus frequency is shown in Figure 4. The test conditions for this scan are as follows:

  • Baseband I/Q amplitude = 1 V pp differential sine wave in quadrature with 500 mV (ADL5375-05) DC bias
  • Baseband I/Q frequency (f BB ) = 1 MHz.

EVM is a measure of the performance quality of a digital transmitter or receiver, reflecting the deviation of actual constellation points from their ideal positions due to amplitude and phase errors (see Figure 5).

Table 3 shows the EVM measurement results with and without filter. In this example, the baseband I/Q signal is generated from the differential I and Q analog outputs using 3GPP test model 4 using a Rhode & Schwarz AMIQ I/Q modulation generator. A type B filter is also used. Figure 6 is a block diagram of the EVM test setup. For comparison, the ADF4350 was also measured. The lower EVM of the ADF4351 due to improved in-band PLL noise performance can be seen in Table 3. Other factors that improve EVM include the ADF4351's lower phase frequency detector (PFD) spurious levels.

Table 3. Single carrier W-CDMA composite EVM results: ADF4351 RF output with filter and without filter (measured according to 3GPP specification test model 4)
 Frequency(MHz)
 ADF4350 composite EVM, no LO filtering
 ADF4350 composite EVM, with LO filter, filter B
 ADF4351 composite EVM, with LO filter, filter B
 2140
 3.27%
 1.31%
 1.02%
 1800
 1.46%
 1.13%
 0.95%
 900
 10.01%
 1.03%
 0.96%

Figure 6. EVM measurement setup (schematic diagram)

 

Driving the ADL5375 LO input differentially provides performance benefits in addition to improved sideband suppression and EVM. This advantage improves the modulator output OIP2 performance by 2 dB to 5 dB compared to a single-ended LO drive. Note that most external VCOs only provide single-ended outputs, so using a differential output with the ADF4351 is preferable to using an external VCO.

Figure 7 shows the sideband suppression results using an 850 MHz to 2450 MHz filter (Type B filter).

Figure 7. Sideband suppression results for 850 MHz to 2450 MHz, Type B filter.

 

For the complete design support package for this circuit note, see http://www.analog.com/CN0285-DesignSupport .

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