| Part Number |
IRFPS60N50C |
IRFPS60N50CPBF |
IRFPS60N50CPBF |
| Description |
Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN |
Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN |
Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN |
| Is it Rohs certified? |
incompatible |
conform to |
conform to |
| package instruction |
SUPER-247, 4 PIN |
IN-LINE, R-PSIP-T3 |
IN-LINE, R-PSIP-T3 |
| Reach Compliance Code |
unknown |
compliant |
compliant |
| Other features |
AVALANCHE RATED |
AVALANCHE RATED |
AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) |
600 mJ |
600 mJ |
600 mJ |
| Shell connection |
DRAIN |
DRAIN |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
500 V |
500 V |
500 V |
| Maximum drain current (ID) |
60 A |
60 A |
60 A |
| Maximum drain-source on-resistance |
0.043 Ω |
0.043 Ω |
0.043 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code |
R-PSIP-T3 |
R-PSIP-T3 |
R-PSIP-T3 |
| Number of components |
1 |
1 |
1 |
| Number of terminals |
3 |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
| Package form |
IN-LINE |
IN-LINE |
IN-LINE |
| Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
260 |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
| Maximum pulsed drain current (IDM) |
240 A |
240 A |
240 A |
| surface mount |
NO |
NO |
NO |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
SINGLE |
SINGLE |
SINGLE |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
40 |
| transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
SILICON |
| Maker |
Infineon |
- |
International Rectifier ( Infineon ) |
| JESD-609 code |
e3 |
- |
e3 |
| Certification status |
Not Qualified |
- |
Not Qualified |
| Terminal surface |
Matte Tin (Sn) - with Nickel (Ni) barrier |
- |
MATTE TIN OVER NICKEL |
| Maximum operating temperature |
- |
150 °C |
150 °C |
| Base Number Matches |
- |
1 |
1 |