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IRFPS

Showing 58 Results for IRFPS, including IRFPS29N60L,IRFPS29N60L, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRFPS29N60L International Rectifier ( Infineon ) SMPS MOSFET Download
IRFPS29N60L Vishay MOSFET N-Chan 600V 29 Amp Download
IRFPS29N60LPBF International Rectifier ( Infineon ) SMPS MOSFET Download
IRFPS29N60LPBF Vishay MOSFET N-Chan 600V 29 Amp Download
IRFPS30N60K International Rectifier ( Infineon ) SMPS MOSFET Download
IRFPS30N60K Vishay MOSFET N-Chan 600V 30 Amp Download
IRFPS30N60KPBF International Rectifier ( Infineon ) SMPS MOSFET Download
IRFPS30N60KPBF Vishay MOSFET N-Chan 600V 30 Amp Download
IRFPS35N50L International Rectifier ( Infineon ) HEXFETPower MOSFET Download
IRFPS35N50L Vishay IRFPS35N50L Download
IRFPS35N50LPBF International Rectifier ( Infineon ) SMPS MOSFET Download
IRFPS35N50LPBF Vishay MOSFET N-Chan 500V 34 Amp Download
IRFPS37N50 International Rectifier ( Infineon ) Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Download
IRFPS37N50A ISC isc N-Channel MOSFET Transistor Download
IRFPS37N50A International Rectifier ( Infineon ) Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) Download
IRFPS37N50A Vishay MOSFET N-Chan 500V 36 Amp Download
IRFPS37N50A_17 Vishay Power MOSFET Download
IRFPS37N50APBF International Rectifier ( Infineon ) 36 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET Download
IRFPS37N50APBF Vishay Aluminum Electrolytic Capacitors - Leaded 470UF 50V ELECT FM RADIAL Download
IRFPS37N50APBF International Rectifier(Infineon) Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 36A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 130mΩ @ 22A, 10V Maximum power dissipation (Ta= 25°C): 446W Type: N-channel N-channel, 500V, 36A, 130mΩ@10V Download
IRFPS3810 International Rectifier ( Infineon ) Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A) Download
IRFPS3810 Infineon MOSFET N-CH 100V 170A SUPER247 Download
IRFPS3810PBF International Rectifier ( Infineon ) 105 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET Download
IRFPS3810PBF Infineon MOSFET 100V SINGLE N-CH 9mOhms 260nC Download
IRFPS3810PBF_15 International Rectifier ( Infineon ) Advanced Process Technology Download
IRFPS3815 International Rectifier ( Infineon ) Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A) Download
IRFPS3815PBF International Rectifier ( Infineon ) HEXFET Power MOSFET Download
IRFPS3815PBF Infineon MOSFET 150V 1 N-CH HEXFET 15mOhms 260nC Download
IRFPS3815PBF_15 International Rectifier ( Infineon ) Advanced Process Technology Download
IRFPS38N60L International Rectifier ( Infineon ) SMPS MOSFET Download
IRFPS Related Product Datasheets:
Part Number Datasheet
IRFPS59N60C 、 IRFPS59N60CPBF 、 IRFPS59N60CPBF Download Datasheet
IRFPS60N50C 、 IRFPS60N50CPBF 、 IRFPS60N50CPBF Download Datasheet
IRFPS37N50 、 IRFPS37N50A Download Datasheet
IRFPS40N60K 、 IRFPS40N60KPBF Download Datasheet
IRFPS29N60L 、 IRFPS29N60LPBF Download Datasheet
IRFPS43N50 、 IRFPS43N50K Download Datasheet
IRFPS30N60K 、 IRFPS30N60KPBF Download Datasheet
IRFPS40N50L Download Datasheet
IRFPS40N50L Download Datasheet
IRFPS40N50LPBF Download Datasheet
IRFPS Related Products:
Part Number IRFPS60N50C IRFPS60N50CPBF IRFPS60N50CPBF
Description Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN Power Field-Effect Transistor, 60A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 4 PIN
Is it Rohs certified? incompatible conform to conform to
package instruction SUPER-247, 4 PIN IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown compliant compliant
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 600 mJ 600 mJ 600 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V 500 V
Maximum drain current (ID) 60 A 60 A 60 A
Maximum drain-source on-resistance 0.043 Ω 0.043 Ω 0.043 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A 240 A 240 A
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker Infineon - International Rectifier ( Infineon )
JESD-609 code e3 - e3
Certification status Not Qualified - Not Qualified
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier - MATTE TIN OVER NICKEL
Maximum operating temperature - 150 °C 150 °C
Base Number Matches - 1 1

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